, o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 stp12nk80z - stb12nk80z STW12NK80Z n-channel 800v - 0.651} - 10.5a to-220 / d2pak / to-247 zener-protected supermesh?power mosfet type stp12nk80z stb12nk80z STW12NK80Z vdss 800v 800v 800v rds(on) < 0.75 fl < 0.75 q < 0.75 n id 10. 5a 10. 5a 10.5 a pw 190w 190 w 190w typical ros(on) = 0.65 q extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility to-220 d2pak to-247 applications . high current, high speed switching . ideal for off-line power supplies internal schematic diagram nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use, nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
stp12nk80z - stb12nk80z - STW12NK80Z absolute maximum ratings symbol vds vdgr vgs id id idm (?) ptot vesd(g-s) dv/dt(1) tj tstg parameter drain-source voltage (vqs = 0) drain-gate voltage (ros = 20 kq) gate- source voltage drain current (continuous) at tc = 25c drain current (continuous) attc = 100c drain current (pulsed) total dissipation at tc = 25c derating factor gate source esd(hbm-c=100pf, r=1.5kfi) peak diode recovery voltage slope operating junction temperature storage temperature value 800 800 30 10.5 6.6 42 190 1.51 6000 4.5 -55 to 150 unit v v v a a a w w/c v v/ns c (?) pulse width limited by safe operating area (1) isd < 10.5a, di/dt <200a/us, vdd < v(br)dss, t, < tjmax. (*) limited only by maximum temperature allowed thermal data rthj-case rthj-amb ti thermal resistance junction-case max thermal resistance junction-ambient max maximum lead temperature for soldering purpose to-220/ d2pak to-247 0.66 62.5 50 300 "cm c/w c avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max) single pulse avalanche energy (starting tj = 25 qc, id = iar, vdd = 50 v) max value 10.5 400 unit a mj gate-source zener diode symbol bvqso parameter gate-source breakdown voltage test conditions lgs= 1 ma (open drain) min. 30 typ. max. unit v protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device's bsd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. _ _ ?
stp12nk80z - stb12nk80z - STW12NK80Z electrical characteristics (tcase =25c unless otherwise specified) on/off symbol v(br)dss loss ?igss ves(th) rds(on) parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) gate threshold voltage static drain-source on resistance test conditions id = 1 ma, vqs = 0 vds = max rating vds = max rating, tc = 125 c vqs = 20v vds = vgs, id =100 ma vgs = 10v, id = 5.25 a min. 800 3 typ. 3.75 0.65 max. 1 50 10 4.5 0.75 unit v ma ma ma v q dynamic symbol 9fs(d ci$s cqss crss goss eq, (3) parameter forward transconductance input capacitance output capacitance reverse transfer capacitance equivalent output capacitance test conditions vds = 15v, id = 5.25 a vds = 25v, f = 1 mhz, vgs = 0 vgs = 0v, vds = 0v to 640v min. typ. 12 2620 250 53 100 max. unit s pf pf pf pf switching on symbol td(on) tr qg qgs qgd parameter turn-on delay time rise time total gate charge gate-source charge gate-drain charge test conditions vdd = 400 v, id = 5.25 a rg = 4.7iivgs = 10v (resistive load see, figure 3) vdd = 640v, id = 10.5 a, vgs = 10v min. typ. 30 18 87 14 44 max. unit ns ns nc nc nc switching off symbol td(off) tf tr(voff) tf tc parameter turn-off delay time fall time off-voltage rise time fall time cross-over time test conditions vdd = 400 v, id = 5.25 a rg = 4.7}vgs = 10 v (resistive load see, figure 3) vdd = 640v, id = 10.5 a, rg = 4,7n, vgs = 10v (inductive load see, figure 5) min. typ. 70 20 16 15 28 max. unit ns ns ns ns ns source drain diode symbol isd isdm (2) vso(1) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 1 0.5 a, vgs = 0 isd =10.5 a, di/dt= 100a/us vdd = ioov, tj = i50c (see test circuit, figure 5) min. typ. 635 5.9 18.5 max. 10.5 42 1.6 unit a a v ns mc a note: 1. pulsed: pulse duration = 300 us, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. cqss eq is defined as a constant equivalent capacitance giving the same charging time as cos5 when vds increases from 0 to 80% vdss.
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